Sophie Bouchoule


CNRS Senior Researcher (DR)

Phone: +33 (0)1 70 27 06 27

After her PhD thesis on 1.55μm high-speed semiconductor laser diodes, Sophie Bouchoule post-doctoral activities were at FT-CNET laboratories, then OPTO+ joint Alcatel-France Telecom Laboratory, where she was involved in the processing of high-speed laser sources at 1550 nm for emerging 40Gb/s applications. In 2001, she joined CNRS, Laboratoire de Photonique et de Nanostructures (LPN), in 2001, that became C2N in 2016.

Since 2001 she has been involved in the development of long-wavelength laser (V(E)CSEL) sources and III-V laser processing and technologies, with a specific emphasis on III-V inductively plasma etching for photonics. Since 2007 she has also been engaged in the development of III-V semiconductor/ organic UV-visible micro-emitters, especially semiconductor-nitride-based micro-emitters for the fabrication of “classical” optical sources as well as for a novel class of integrated coherent light sources, namely “polariton lasers”.

She is author or co-author of more than 130 papers in international journals and has contributed to more than 160 presentations at international conferences, including 25 invited talks. Since 2007, she has been the P.I. in 3 industrial R&D contracts dealing with optoelectronic devices and micro-nanotechnology.

Sophie has been in the management board of LPN clean room facilities from 2003 to 2007, and scientific advisor of LPN director (2012-2016) for “optoelectronic devices”.

Since 2018 she is in charge of the scientific coordination of C2N-RENATECH Micro-Nano Fabrication Facility. She is also deputy director of the doctoral school “EOBE – electrical, optical and bio-engineering” at Paris-Saclay University since its creation in 2015.


Main research activities: III-V Integrated Light Sources (ELISE)

Research Identifiers: Google Scholar

Publications - Since 2010. For a full list of publications, have a look at Google Scholar.

Manuscripts: Mémoire d'Habilitation à diriger les recherches (HDR)

Articles in international journals:

C Brimont1, L Doyennette1, G Kreyder2, F Réveret2, P Disseix2, F Médard2, J Leymarie2, E Cambril3, S Bouchoule3, M Gromovyi4, B Alloing4, S Rennesson4, F Semond4, J Zúñiga-Pérez4, T Guillet1,

Strong Coupling of Exciton-Polaritons in a Bulk Planar Waveguide: Quantifying the Coupling Strength”,

Physical Review Applied 14, 054060 (2020)

DOI: 10.1103/PhysRevApplied.14.054060

[1: L2C ; 2 ; Institut Pascal; 3 : C2N ; 4 : CRHEA-CNRS]


B. Boisnard1, C. Levallois2, C. Paranthoen2, S. Pes2, T. Camps1, B. Sadani1, K. Tavernier1, S. Bouchoule3, L. Dupont4, M. Alouini2, P. Debernardi5, V. Bardinal1,

CW Operation of a Tunable 1550-nm VCSEL Integrating Liquid-Crystal Microcells”,

IEEE Photon. Technol. Lett. 32, 391 (2020)

DOI : 10.1109/LPT.2020.2975076

[1: LAAS-CNRS; 2 : FOTON ; 3: C2N-CNRS; 4 : Telecom Bretagne, 5 : CNR IEIIT Torino]


A. Nehuen Gortari, S. Bouchoule, E. Cambril, A. Cattoni, L. Hauke, J. Enderlein, F. Rehfeldt, A. Yacomotti,

Metasurface-based total internal reflection microscopy”,

Biomedical Optics Express 11, 1967 (2020)

DOI: 10.1364/BOE.385276


O. Jamadi1, F. Réveret1, D. Solnyshkov1, P. Disseix1, J. Leymarie1, L. Mallet-Dida2, C. Brimont2, T. Guillet2, X. Lafosse3, S. Bouchoule3, F. Semond4, M. Leroux4, J. Zuniga-Perez4, and G. Malpuech1,

Competition between horizontal and vertical polariton lasing in planar microcavities”,

Phys. Rev. B 99, 085304 (2019).

DOI : 10.1103/PhysRevB.99.085304

[1: Institut Pascal; 2: L2C ; 3 : C2N ; 4 : CRHEA-CNRS]


O. Jamadi1, F. Reveret1, P. Disseix1, F. Medard1, J. Leymarie1, A. Moreau1, D. Solnyshkov1, C. Deparis2, M. Leroux2, E. Cambril3, S. Bouchoule3, J. Zuniga-Perez2 and G. Malpuech1,

Edge-emitting polariton laser and amplifier based on a ZnO waveguide”,

Light: Science & Applications 7, 82 (2018).

DOI: 10.1038/s41377-018-0084-z

[1: Institut Pascal; 2: CRHEA-CNRS; 3: C2N-CNRS]


C. Levallois1, B. Sadani2, B. Boisnard2, T. Camps2, C. Paranthoën1, S. Pe1, S. Bouchoule3, L. Dupont4, J.-B. Doucet2, M. Alouini1, and V. Bardinal3,

Liquid crystal-based tunable photodetector operating in the telecom C-band”,

Optics Express 26, 25952 (2018)

DOI: 10.1364/OE.26.025952

[1: FOTON; 2: LAAS-CNRS; 3: C2N-CNRS; 4 : Telecom Bretagne]


B. Sadani1, B. Boisnard1, X. Lafosse2, T. Camps1, J.-B. Doucet1, E. Daran1, C. Paranthoen3, C. Levallois3, L. Dupont4, S. Bouchoule2, and V. Bardinal1,

Liquid-Crystal Alignment by a Nanoimprinted Grating for Wafer-Scale Fabrication of Tunable Devices”,

IEEE Photon. Technol. Lett. 30, 1388 (2018)

DOI : 10.1109/LPT.2018.2849641

[1: LAAS-CNRS; 2: C2N-CNRS; 3: FOTON-INSA ; 4 : Telecom Bretagne]


Hui Liu1, G. Gredat1, S. De1, I. Fsaifes1, A. Ly1, R. Vatré1, G. Baili2, S. Bouchoule3, F. Goldfarb1, and F.Bretenaker1,

Ultra-low noise dual-frequency VECSEL at telecom wavelength using fully correlated pumping”,

Opt. Lett. 43, 1794 (2018)

DOI: 10.1364/OL.43.001794

[1: LAC; 2: Thalès R&T; 3: C2N-CNRS]


Z. Fan1, J.-L. Maurice1, W. Chen1, S. Guilet2, E. Cambril2, X. Lafosse2, L. Couraud2, K. Merghem2, Linwei Yu1,3, S. Bouchoule2, and P. Roca i Cabarrocas1

On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas”,

Langmuir 33, 12114 (2017)

DOI: 10.1021/acs.langmuir.7b01743

[1: LPICM CNRS/Ecole Polytechnique; 2 : C2N-Marcoussis CNRS/UPSUD ; 3 : Nanjing University, China]


G.Crosnier1,2, D. Sanchez2, S. Bouchoule2, P. Monnier2, G. Beaudoin2, Is. Sagnes2, R. Raj2 and F. Raineri2,

Hybrid indium phosphide-on-silicon nanolaser diode”,

Nature Photonics, 11, 7 (2017).

DOI: 10.1038/NPHOTON.2017.56

[1: ST-Microelectronics; 2 : C2N-Marcoussis]


S. Pes1, C. Paranthoen1, C. Levallois1, N. Chevallier1, C. Hamel1, K. Audo1, GOULC’HEN LOAS1, S. Bouhier1, C. Gomez2, J.-C. Harmand2, S. Bouchoule2, H. Folliot1, and M. Alouini1,

Class-A Operation of an Optically-Pumped 1.6 μm-emitting Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InP”,

Opt. Exp.25, 11760 (2017)

DOI: 10.1364/OE.25.011760

[1: FOTON, Rennes; 2: C2N-CNRS]


K. Papatryfonos1, D.Saladukha2, K. Merghem1, S. Joshi, F. Lelarge4, S. Bouchoule1, D.Kazazis1, S. Guilet1, L. Le Gratiet1, T. J. Ochalski2,3, G. Huyet2,3,5, A. Martinez1, and A. Ramdane1,

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings”,

J. Appl. Phys. 121, 053101 (2017)

DOI: 10.1063/1.4975036

[1: LPN-CNRS; 2: Tyndall National Institute; 3: Cork Institute of Technology; 4: III-V Lab; 5: National University St Petersbourg, Russia]


L. Chaccour1,2, G. Aubin2, K. Meghem2, J-L. Oudar2, A. Khadour1, P. Chatelier1, and S. Bouchoule2,

Cross-Polarized Dual-Frequency VECSEL at 1.5 µm for Fiber-based Sensing Applications”,

IEEE Photonics 8, 6805310 (2016)

DOI: 10.1109/JPHOT.2016.2619058



F. Reveret1, L. Bignet1, W. Zhigang1, X. Lafosse2, G. Patriarche2, P. Disseix1, F. Medard1, M. Mihailovic1, J. Leymarie1, J. Zuniga-Perez3, S. Bouchoule2,

High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx”,

J. Appl. Phys. 120, 093107 (2016)

DOI : 10.1063/1.4961658

[1: Institut Pascal; 2: LPN-CNRS ; 3 : CRHEA]


O. Jamadi1, F. Reveret1, F. Mallet1, P. Disseix1, F. Medard1, M. Mihailovic1, D. Solnyshkov1, G. Malpuech1, J. Leymarie1, X. Lafosse2, S. Bouchoule2, F. Li,3 M. Leroux3, F. Semond3, J. Zuniga-Perez3,

Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO”,

Phys. Rev. B 93, 115205 (2016)

DOI : 10.1103/PhysRevB.93.115205

[1: Institut Pascal; 2: LPN-CNRS; 3: CRHEA]


110. F. Raineri, G. Crosnier, D. Sanchez, A. Bazin, P. Monnier, S. Bouchoule, R. Braive, G. Beaudoin, I. Sagnes, and R.Raj,

High Q-factor InP Photonic Crystal Nanobeam cavities on Silicon wire waveguides”,

Opt. Lett. 41, 579 (2016).

DOI: 10.1364/OL.41.000579


109. R. Hahe1, C. Brimont1, P. Valvin1, T. Guillet1, F. Li2, M. Leroux2, J. Zuniga-Perez2, X. Lafosse4, G. Patriarche4, S. Bouchoule4

“Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity”,

Phys. Rev. B 92, 235308 (2015).

DOI: 10.1103/PhysRevB.92.235308

[1: LCC; 2: CRHEA ; 3: LPN-CNRS]


R. Hahe1, C. Brimont1, P. Valvin1, T. Guillet1, F. Li2, M. Leroux2, J. Zuniga-Perez2, X. Lafosse4, G. Patriarche4, S. Bouchoule4

“Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity”,

Phys. Rev. B 92, 235308 (2015).

DOI: 10.1103/PhysRevB.92.235308

[1: LCC; 2: CRHEA ; 3: LPN-CNRS]


S. Bouchoule1, R. Chanson2, A. Pageau2, E. Cambril1, S. Guilet1, A. Rhallabi1, C. Cardinaud2,

Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS”,

J. Vac. Sci. Technol. A 33, 05E124 [11 pages] (2015)

DOI: 10.1116/1.4927541



Y. Cohin1, F. Glas1, A. Cattoni1, S. Bouchoule1, O. Mauguin1, L. Largeau1, G. Patriarche1, E. Sondergard2, J.-C. Harmand1,

Crystallization of Si templates of controlled shape, size and orientation: Toward micro- and nano-substrates”,

Cryst. Growth Des. 15, 2102 (2015)

DOI: 10.1021/cg5016548

[1: LPN-CNRS; 2: UMR CNRS/Saint-Gobain]


X Li1, S. Sundaram1, Y. El Gmili1, F. Genty2, S. Bouchoule3, G. Patriache3, P. Disseix4, F. Reveret4, J. Leymarie4, J.-P. Salvestrini1, R. D. Dupuis1, P. L. Voss1, A. Ougazzaden1,

MOVPE grown periodic AlN/BAIN heterostructure with high boron content”,

J. CRYSTAL GROWTH 414, 119 (2015)

DOI: 10.1016/j.jcrysgro.2014.09.030

[1: UMI GeorgiaTech; 2:LMOPS; 3:LPN-CNRS; 4: Institut Pascal]


S. De1, G. Baili2, S. Bouchoule3, M. Alouini2, F. Bretenaker1,

Intensity- and phase-noise correlations in a dual-frequency vertical-external-cavity surface-emitting laser operating at telecom wavelength”,

Phys. Rev. A 91, 20 (2015)

DOI: 10.1103/PhysRevA.91.053828

[1: LAC; 2: Thalès R&T; 3: LPN-CNRS]


X. Li1, S. Sundaram1, Y. El Gmili1, T. Moudakir1, F. Genty2, S. Bouchoule3, G. Patriarche3, RD. Dupuis1, PL. Voss1, JP. Salvestrini1, A. Ougazzaden1,

BAlN thin layers for deep UV applications”,

Phys. Status Solidi A-Appl. Mat. 212, 745 (2015)

DOI: 10.1002/pssa.201400199

[1: UMI-GeorgiaTech; 2: LMOPS-Supelec; 3: LPN-CNRS]


Xin Li1, S. Sundaram1, G. Le Gac2, P. Disseix2, S. Bouchoule3, G. Patriarche3, F. Reveret2, J. Leymarie2, Y. El Gmili1, T. Moudakir1, F. Genty4, JP. Salvestrini1, R. D. Dupuis1, PL. Voss1, A. Ouagazzaden1,

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm” , Optical Materials Express 5, 380 (2015)

DOI: 10.1364/OME.5.000380

[1: UMI-GeorgiaTech; 2: Institut Pascal ; 3: LPN-CNRS; 4:LMOPS-Supelec]


Wanghua Chen1, Linwei Yu1, S. Misra1, Zheng Fan1, P. Pareige2, G. Patriarche1, S. Bouchoule1, and P.Roca i Cabarrocas2,

Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth”,

Nature Com. 5, 4134 (2014)

DOI: 10.1038/ncomms5134

[1: LPICM, Ecole Polytechnique; 2: GPM Univ. Rouen; 3: LPN-CNRS]


S. De1, G. Baili2, M. Alouini2, J.-C. Harmand3, S. Bouchoule3, F. Bretenaker1,

Class-A dual-frequency VECSEL at telecom wavelength”,

Opt. Lett. 39, 5586 (2014)

DOI: 10.1364/OL.39.005586

[1: LAC Orsay; 2: Thalès Research and Technology; 3: LPN-CNRS]


J. Zuniga-Perez1, E. Mallet2, R. Hahe3, M. J. Rashid1, S. Bouchoule4, C. Brimont3, P. Disseix2, J.-Y. Duboz1, G. Gomme1, T. Guillet3, O. Jamadi1, X. Lafosse4, M. Leroux, J. Leymarie2, F. Li1, F. Reveret2, F. Semond3,

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers”, Appl. Phys. Lett. 104, 241113 (2014)

DOI: 10.1063/1.4884120

[1: CRHEA-CNRS; 2: Institut Pascal; 3: LCC-Montpellier; 4: LPN-CNRS]


G. Baili1, L. Morvan1, G. Pillet1, S. Bouchoule2, Z. Zhao2, J.-L. Oudar2, L. Menager1, S. Formont1, F. Van Dijk1, M. Faugeron1, M. Alouini1, F. Bretenaker3, D. Dolfi1

Ultralow noise and high-power VECSEL for high dynamic range and broadband RF/optical links”,

J. Lightwave Technol. 32, 3489 (2014)

DOI: 10.1109/JLT.2014.2326956

[1: Thalès Rsearch and Technology; 2: LPN]


G. Barbillon1,2, F. Gourdon2, E. Cambril1, N. Fabre2, A. M. Yacomotti1, and S. Bouchoule1

SiNx/organic photonic crystal microcavity optimization for the fabrication of a thin-film micro-laser”,

Opt. Commun. 325, 15 [8 pages] (2014)

DOI: 10.1016/j.optcom.2014.03.067

[1: LPN-CNRS; 2: LPL, Univ. Villetaneuse]


H. S. Nguyen1, Z. Han1,2, K. Abdel-Baki2, X. Lafosse1, A. Amo1, J.-S. Lauret2, E. Deleporte2, S. Bouchoule1 and J. Bloch1

Quantum confinement of zero-dimensional hybrid organic-inorganic polaritons at room temperature”

Appl. Phys. Lett. 104, 081103 (2014)

DOI: 10.1063/1.4866606

[1: LPN-CNRS; 2: LPQM ENS Cachan]


Zhuang ZHAO, S. Bouchoule, J.-C. Harmand, G. Patriarche, G. Aubin, and J.-L. Oudar,

Recent advances in the development of vertical-cavity based short pulse source at 1.55 µm”,

[Review Article] Frontiers of Optoelectronics 7, 1 [18 pages] (2014)

DOI: 10.1007/s12200-014-0387-5


R. Chanson1, S. Bouchoule2, C. Cardinaud1, C. Petit-Etienne3, E. Cambril2, A. Rhallabi1, S. Guilet2, E. Blanquet4,

" X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma ",

J. Vac. Sci. Technol. B 32, 011219 [12 pages] (2014).

DOI : 10.1116/1.4862256

[1: IMN-Nantes, 2: LPN-CNRS, 3: LTM-CNRS, 4: SiMAP]


Z. Han1,2, H.-S. Nguyen1, F. Reveret3, K. Abdel-Baki2, J.-S. Lauret2, J. Bloch1, S. Bouchoule1, E. Deleporte2,

Top-Mirror Migration for the Fabrication of High-Q Planar Microcavities Containing Fragile Active Materials”,

Appl. Phys. Express 6, 106701 [4 pages] (2013)

DOI : 10.7567/APEX.6.106701



F. Li1, L. Orosz2, O. Kamoun3, S. Bouchoule4, C. Brimont3, P. Disseix2, T. Guillet3, X. Lafosse4, M. Leroux1, J. Leymarie2, M. Mexis3, M. Mihailovic2, G. Patriarche4, F. Reveret2, D. Solnyshkov2, J. Zuniga-Perez4, G. Malpuech2,

From excitonic to photonic polariton condensate in a ZnO-based microcavity”,

Phys. Rev. Lett. 110, 196406 [5 pages] (2013)

DOI : PhysRevLett.110.196406



D. Legrand1, C. Roquelet1, G. Lanty1, Ph. Roussignol2, X. Lafosse3, S. Bouchoule3, E. Deleporte1, C. Voisin2, and J. S. Lauret1,

Monolithic microcavity with carbon nanotubes as active material”,

Appl. Phys. Lett. 102, 153102 (2013)

DOI : 10.1002/pssa.201228770

1: LPQM-Ens Cachan, 2:LPA –UPMC ENS Paris; 3: LPN-CNRS


J. Song1,2,4, S. Bouchoule1, G. Patriarche1, E. Galopin1, A. Giacomotti1, E. Cambril1, Q. Kou2, D. Troadec3, J.-J. He4, J.-C. Harmand1,

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice”,

Phys. Status Solidi A-Appl. Mat. 210 , 1171 (2013)

DOI: 10.1002/pssa.201228770

[1: LPN-CNRS, 2: ISMMO-Orsay; 3:IEMN-Lille; 4: Zhejiang University, Hangzhou, China]


Z. Han1,2, H.-S. Nguyen2, F. Boitier1, Y. Wei1, J.-S. Lauret1, J. Bloch2, S. Bouchoule2, E. Deleporte1,

High-Q planar organic-inorganic Perovskite-based microcavity”,

Opt. Lett. 37, 5061 (2012)

DOI: 10.1364/OL.37.005061

1: LPQM-ENS Cachan, 2: LPN-CNRS


J. Song1,2,3, L. Wang1, L. Jin1, X. Xia1, Q. Kou2, S. Bouchoule3, and J.-J. He1,

Intensity interrogated sensor based on cascaded Fabry-Perot laser and micro-ring resonator”,

IEEE Light. Technol. Lett. 30, 2901 (2012)

DOI: 10.1109/JLT.2012.2209401

1: State Key Laboratory of Modern Optical Instrumentation, Centre for Integrated Optoelectronics, Dept Opt. Eng., Zhejiang University, Hangzhou, 2: LPN-CNRS, 3: ISMMO Orsay


F. Gourdon1, M. Chakaroun1, N. Fabre1, J. Solard1, E. Cambril2, A.-M. Yacomotti2, S. Bouchoule2, A. Fischer1 and A. Boudrioua1,

Optically pumped lasing from organic two-dimensional planar photonic crystal microcavity”,

Appl. Phys. Lett. 100 (issue 22, 213304 (2012)

DOI: 10.1063/1.4720178

1: LPL, Univ. Paris 13; 2: LPN-CNRS


L. Orosz1, F. Reveret1, F. Médard1, P. Disseix1, J. Leymarie1, M. Mihailovic1, D. D. Solnyshkov1, G. Malpuech1, J. Zúñiga-Pérez2, F. Semond2, M. Leroux2, S. Bouchoule3, X. Lafosse3, M. Mexis4, C. Brimont4, T. Guillet4,

LO-phonon-assisted polariton lasing in a ZnO-based microcavity”,

Phys. Rev. B 85, 121201(R) (2012) (Rapid Com.)

DOI: 10.1103/PhysRevB.85.121201

1: LASMEA; 2: CRHEA ; 3: LPN-CNRS; 4: LCC-Montpellier


S. Bouchoule1, L. Vallier2, G. Patriarche1, T. Chevolleau2, C. Cardinaud3,.

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in-situ X-ray photoelectron spectroscopy”,

J. Vac. Sci. Technol. A 30, 031301 (2012)

DOI: 10.1116/1.3692751

1: LPN-CNRS; 2: LTM-CNRS ; 3 :IMN-Nantes


Z. Zhao1, S. Bouchoule1, L. Ferlazzo1, A. Sirbu2, A. Mereuta2, E. Kapon2, E. Galopin1, J.-C. Harmand1, J. Decobert3, J.-L. Oudar1,

A cost-effective thermally-managed 1.55 µm VECSEL with hybrid mirror on copper substrate”,

IEEE J. Quant. Electron. 48, 643 (2012)

DOI: 10.1109/TPS.2012.2183391

1: CNRS-LPN; 2: ETHZ-Switzerland ; 3 : Alcatel-Thalès 3-5 Lab


R. Chanson1, A. Rhallabi1, M.-C. Fernandez1, C. Cardinaud1, S. Bouchoule2, L. Gatilova2, A. Talneau2,

Global model of Cl2/Ar high-density plasma discharge and 2D Monte Carlo etching model of InP”,

IEEE Transactions on Plasma Science 40 (issue 4), 959 (2012)

DOI: 10.1109/TPS.2012.2183391

1: IMN - Nantes; 2: LPN-CNRS


G. Lanty1, S. Zhang1, J.-S. Lauret1, E. Deleporte1, P. Audebert2, S. Bouchoule3, X. Lafosse3, J. Zúñiga-Pérez4, F. Semond4, D. Lagarde5, F. Médard5, J. Leymarie5,

Hybrid cavity-polaritons in a ZnO-perovskite microcavity”,

Phys. Rev. B 84, 195449 (2011).

DOI: 10.1103/PhysRevB.84.195449

1: LPQM-ENS Cachan; 2: LPPSM-ENS Cachan; 3: LPN-CNRS; 4: CRHEA-CNRS; 5: LASMEA


L. Yu1, W. Chen2, B. O’Donnell11, G. Patriarche3, S. Bouchoule3, P.Pareige2, R. Rogel4, A.-C. Salaun4, L. Pichon4, and P. Roca i Cabarrocas1,

Growth-in-place deployment of in-plane silicon nanowires”,

Appl. Phys. Lett. 99, 203104 (2011)

DOI: 10.1103/PhysRevB.84.195449

1: LPICM; 2: GPM Rouen; 3: LPN-CNRS; 4: IETR.


T. Guillet1, M. Mexis1, J. Levrat2, G. Rossbach2, C. Brimont1, T. Bretagnon1, B. Gil1, R. Butté2, N. Grandjean2, L. Orosz3, F. Reveret3, J. Leymarie3, J. Zúñiga-Pérez4, M. Leroux4, F. Semond4, S. Bouchoule5,

Polariton lasing in a hybrid ZnO bulk microcavity”,

Appl. Phys. Lett. 99, 161104, (2011).

DOI: 10.1063/1.3650268

1: LCC; 2: EPFL-Switzerland; 3: LASMEA; 4; CRHEA; 5: LPN-CNRS


Z. Zhao1, S. Bouchoule1, J. Song1, E. Galopin1, J.-C. Harmand1, J. Decobert2, G. Aubin1, and J.-L. Oudar1,

Sub-ps pulse generation from a 1.56 µm mode-locked VECSEL”,

Opt. Lett., vol. 36, Issue 22, pp. 4377-4379, 2011

DOI: 10.1364/OL.36.004377

1: LPN; 2: Alcatel-Thales 3-5 Lab


L. Orosz1, F. Réveret1, S. Bouchoule2, J. Zúñiga-Pérez3, F. Médard1, J. Leymarie1, P. Disseix1, M. Mihailovic1, E. Frayssinet3, F. Semond3, M. Leroux3, C. Brimont4, T. Guillet4 ,

Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime”

Appl. Phys. Express, vol. 4, p. 072001(3 pages), 2011

DOI : 10.1143/APEX.4.072001

1: LASMEA; 2 :LPN ; 3 :CRHEA ; 4 : LCC (ex-GES)

in top-20 most-downloaded articles in APEX – July2011-August 2011.


L. Gatilova, S. Bouchoule, S. Guilet, G. Patriarche,

Addition of Si-containing gases for anisotropic etching of III-V materials in chlorine-based inductively coupled plasma”,

Jpn. J. Appl. Phys., vol. 50, p. 08JE02 (5 pages), 2011

DOI : 10.1143/JJAP.50.08JE02


T. Guillet1, C. Brimont1, P. Valvin1, B. Gil11, T. Bretagnon1, F. Médard2, M. Mihailovic2, J. Zúñiga-Pérez3, M. Leroux3, F. Semond3, and S. Bouchoule4

Laser emission with excitonic gain in a ZnO planar microcavity”,

Appl. Phys. Lett. 98, 211105 (2011)

DOI : 10.1063/1.3593032

1: L2C (ex-GES) ; 2 :LASMEA ; 3 :CRHEA ; 4 : LPN


L. Gatilova, S. Bouchoule, G. Patriarche and S. Guilet,

High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material”,

J. Vac. Sci. Technol. B, vol. 29 (Letters), p. 020601 (5 pages), 2011.

DOI: 10.1116/1.3546024

Selected for publication in Virtual Journal of Nanoscale Science & Technology 23 (issue 6), February 14, 2011.


F. Médard1, D. Lagarde1, J. Zúñiga-Pérez2, P. Disseix1, M. Mihailovic1, J. Leymarie1, E. Frayssinet2, J. C. Moreno2, F. Semond2, M. Leroux2, and S. Bouchoule3,

Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities”,

J. Appl. Phys., vol. 108, p. 043508, 2010.

DOI: 10.1063/1.3476553



G. Baili1, M. Alouini1, L. Morvan1, D. Dolfi1, A. Khadour2, S. Bouchoule2, and J.-L. Oudar2,

Timing Jitter Reduction of a Mode-locked VECSEL Using an Optically Triggered SESAM”,

IEEE Photon. Technol. Lett., vol. 22(issue19), pp. 1434-1436, 2010.

DOI: 10.1109/LPT.2010.2058796

1: Thales Research and Technology (TRT), 2: LPN-CNRS


A. Khadour1, S. Bouchoule1, G. Aubin1, J.-C. Harmand1, J. Decobert2, and J.-L. Oudar1,

Ultrashort pulse generation from 1.56 µm mode-locked VECSEL at room temperature”,

Opt. Express, vol. 18, pp. 19902-19913, 2010

DOI: 10.1364/OE.18.019902

1: LPN; 2: Alcatel-Thales 3-5 Lab.


E. Wertz, L. Ferrier, D. Bajoni, P. Senellart, A. Lemaître, I. Sagnes, S. Bouchoule, S. Barbay, R. Kuszelewicz, and J. Bloch,

Cavity polaritons for new photonic devices”,

Proc. SPIE, vol. 7608, pp. 76080S, 2010.

Proceedings of Photonics West, Quantum Sensing and Nanophotonic Devices VII, San Francisco, CA, USA, Jan. 2010.

DOI: 10.1117/12.839509


L. C. Estrada1, O. E. Martinez1, M. Brunstein2, S. Bouchoule2, L. Le-Gratiet2, A. Talneau2, I. Sagnes2, P. Monnier2, J. A. Levenson2, and A. M. Yacomotti2,

Small volume excitation and enhancement of dye fluorescence on a 2D photonic crystal surface”,

Opt. Express, vol. 18 (Issue 4) , pp. 3693-3699, 2010

DOI: 10.1364/OE.18.003693

1: FCEN- Universidad de Buenos Aires -Argentina, 2: LPN-CNRS


O. Chelda-Gourmalaa1, A. Trassoudaine1, Y. André1, S. Bouchoule2, E. Gil11, J. Tourret1, D. Castelluci1, R. Cadoret1,

Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures”,

J. Crystal Growth, vol. 312 (Issues 12-13), pp. 1899-1907, 2010

DOI: 10.1016/j.jcrysgro.2010.02.020

1: LASMEA - CNRS-Univ. Clermont-Ferrant, 2: LPN-CNRS.


G.A. Curley1, L. Gatilova1, S. Guilet1, and S. Bouchoule1, G.S. Gogna2, N. Sisrse2, and S. Karkari2, and Jean-Paul Booth3,

Surface loss rates of H and Cl radicals in an inductively coupled plasma etching tool derived from time-resolved OES and electron density measurements”,

J. Vac. Sci. Technol. A, vol. 28, pp. 360-372, 2010.

DOI : 10.1116/1.3330766

1:LPN, 2: NCPST Dublin City University Ireland, 3: LPP, CNRS-Ecole Polytechnique

in Top20 most downloaded JVSTA articles – April 2010


G. Lanty1, J.S. Lauret1, E. Deleporte1, S. Bouchoule2 and X. Lafosse2

Strong-coupling regime at room temperature in one-dimensional microcavities containing ultraviolet-emitting perovskites

Superlattices and Microstructures, vol. 47, pp. 10-15, 2010.

Proceedings of the 9th International Conference on Physics of Light-Matter Coupling in Nanostructures, PLMCN 2009 (Lecce - Italy)

DOI: 10.1016/j.spmi.2009.06.006  

1: LPQM ; 2: LPN