Mir-THz devices

 Permanent Staff

R. Colombelli
+33 (0)1 70 27 06 29
raffaele.colombelli@c2n.upsaclay.fr
A. Bousseksou
+33 (0)1 70 27 06 22
adel.bousseksou@c2n.upsaclay.fr
J.-M. Manceau
+33 (0)1 70 27 06 73
jean-michel.manceau@c2n.upsaclay.fr
F. Julien
+33 (0)1 70 27 04 69
francois.julien@c2n.upsaclay.fr

 Objectives

The goal of the Mir-THz research activity is to developp novel optoelectronic devices within the technologically under-developped part of the EM spectrum (Mid to Far infrared / λ ≈3 µm to 300 µm). To do so, we explore a solid state approach where we use the confined electronic transition within the conduction band of Quantum Wells (QW), the so-called intersubband transitions. These transitions are at the heart of various devices such as Quantum Cascade Lasers (QCL), Polaritonic light emitting diode (LED) and Quantum Well Infrared Photodetectors (QWIP).

 

Quantum Cascade Lasers

Quantum Cascade Lasers

State of the art Mid-IR and THz unipolar devices

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Detectors

Detectors

Mid and Far IR photodetector based on cascade structure

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Polaritonic devices

Polaritonic devices

Mid-IR optoelectronics devices operating in the strong coupling regime

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Wide band-gap materials

Wide band-gap materials

ISB transitions and devices based on wide band-gap materials

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